Technical Program

Session	Devices, Characterization & Packaging 2
Date/Time	25 May 2021 / 16:00 − 18:00 hrs
Session Chair/Co-Chair	Prof Jun Imaoka / Prof Sudarshan K.Valluru

	Application of An Active Gate Driver for Paralleling Operation of Si IGBT and SiC MOSFET Yuqi Wei, Xia Du, Dereje Woldegiorgis and Alan Mantooth
	A Simple Transfer Capacitance Measurement Method of SiC MOSFET in High-voltage Applications Huaqing Li, Chengzi Yang, Haoyuan Jin, Mengyu Zhu, Longyang Yu, Fengtao Yang, Shenghe Wang and Laili Wang
	Research on Switching Characteristics of SiC MOSFET in Pulsed Power Supply with Analytical Model Zaojun Ma, Yunqing Pei, Laili Wang, Qingshou Yang, Xiaohui Lu and Fengtao Yang
	An Improved Drain-source Capacitance Characterization Method for SiC MOSFET Switching Performance Prediction Huaqing Li, Chengzi Yang, Mengyu Zhu, Wei Mu, Shuting Feng, Shijie Wu, Laili Wang and Shenghe Wang
	Design of Low Parasitic Inductance Three-level T-type SiC-MOS/Si-IGBT Module Ye Wang, Min Chen and Dehong Xu